t4 - lds -0 276 -1, rev . 1 (12 1221 ) ?201 2 microsemi corporation page 1 of 7 2n3498l thru 2n3501l available on commercial versions npn silicon transistor qualified per mil - prf - 19500/3 66 qualified levels : jan, jantx , jantxv and jans description this family of 2n3498 l thr u 2 n350 1l epitaxial planar transistors are military qualified up to a jans level for high - reliability applications . these devices are also available in to - 39 and low profile u4 packaging. microsemi also offers numerous other transistor products to meet high er and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. to -5 package also available in : to - 39 (to - 205ad) package ( leaded) 2n3 498 C 2n350 1 u4 package (surface mount) 2n3 498 u4 C 2n350 1 u4 i mportant: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3 498 through 2n3 50 1 series. ? jan, jantx, jantxv, and jans qualifications are available per mil - prf -1 9500/366. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? general purpose transistors for medium power applications requiring high frequency switching . ? l ow package profile. ? military and other high - reliability applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3 498 l 2n3499 l 2n3 50 0l 2n3501 l unit collector - emitter voltage v ceo 10 0 1 50 v collector - base voltage v cbo 10 0 150 v emitter - base voltage v eb o 6.0 6.0 v collector current i c 500 300 ma thermal resistance junction - to - ambient r ? ja 175 o c/w thermal resistance junction - to - case r ? jc 30 o c/w total power dissipation @ t a = +25 c (1) @ t c = + 25 c (2) p t 1 .0 5 .0 w operating & storage junction te mperature range t j , t stg - 65 to +200 c notes : 1. see figure 1 . 2. see figure 2 . downloaded from: http:///
t4 - lds -0 276 -1, rev . 1 (12 1221 ) ?201 2 microsemi corporation page 2 of 7 2n3498l thru 2n3501l mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? terminals: leads are k ov ar, n ickel plated, and finish is solder dip (sn63/pb37). can be rohs compliant with pure matt e - tin (commercial grade only) . ? marking: part number, d ate c ode, m anufacturers id. ? weight: approximately 1. 1 4 grams. ? see p ackage d imensions on last page. part nomenclature jan 2n3 498 l (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number (see el ectrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant long - lead to - 5 package symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance i ceo c ollector cutoff current, base open i cex c ollector cutoff current, circuit between base and emitter i ebo e mitter cutoff current, collector open h fe c ommon - emitter static forward current transfer ratio v ceo c ollector - emitter voltage, base open v cbo c ollector - emitter voltage, emitter open v ebo e mitter - base voltage, collector open downloaded from: http:///
t4 - lds -0 276 -1, rev . 1 (12 1221 ) ?201 2 microsemi corporation page 3 of 7 2n3498l thru 2n3501l electrical characteristics @ t a = +25 c, unless otherwise noted characteristic symbol min. max. unit of f characteristics collector - emitter breakdown voltage i c = 10 ma , pulsed 2n3498 l, 2n3499 l 2n3500 l, 2n3501 l v (br) ceo 100 150 v collector - base cutoff current v cb = 50 v v cb = 75 v v cb = 10 0 v v cb = 15 0 v 2n3498 l, 2n3499 l 2n3500 l, 2n3501 l 2n3498 l, 2n3499 l 2n3500 l, 2n3501 l i cbo 50 50 10 10 na na a a e mitter -base cutoff current v eb = 4. 0 v v eb = 6. 0 v i ebo 25 10 na a on characteristic s (1) forward - current transfer ratio i c = 0. 1 ma , v ce = 10 v i c = 1. 0 ma , v ce = 10 v i c = 10 ma , v ce = 10 v i c = 15 0 ma , v ce = 10 v i c = 30 0 ma , v ce = 10 v i c = 50 0 ma , v ce = 10 v 2n3498 l, 2n3500 l 2n3499 l, 2n3501 l 2n3498 l, 2n3500 l 2n3499 l, 2n3501 l 2n3498 l, 2n3500 l 2n3499 l, 2n3501 l 2n3498 l, 2n3500 l 2n3499 l, 2n3501 l 2n3500 l 2n3501 l 2n3498 l 2n3499 l h fe 20 35 25 50 35 75 40 100 15 20 15 20 120 300 collector - emitter saturation voltage i c = 10 ma , i b = 1. 0 ma i c = 30 0 ma , i b = 30 ma i c = 15 0 ma , i b = 15 ma all types 2n3498 l, 2n3499 l 2n3500 l, 2n3501 l v ce(sat) 0.2 0.6 0.4 v base- emitter saturation voltage i c = 10 ma , i b = 1. 0 ma i c = 30 0 ma , i b = 30 ma i c = 15 0 ma , i b = 15 ma all types 2n3498 l, 2n3499 l 2n3500 l, 2n3501 l v be(sat) 0.8 1.4 1.2 v dynami c characteristics forward current transfer ratio, magnitude i c = 20 ma , v ce = 20 v, f = 10 0 mhz |h fe | 1.5 8.0 output capacitance v cb = 10 v, i e = 0, 10 0 kh z < f < 1.0 mhz 2n3498 l, 2n3499 l 2n3500 l, 2n3501 l c obo 10 8.0 pf inpu t capacitance v eb = 0. 5 v, i c = 0, 10 0 kh z < f < 1.0 mhz c ibo 80 pf (1) pulse test: p ulse w idth = 300 s, d ut y c ycl e < 2.0%. downloaded from: http:///
t4 - lds -0 276 -1, rev . 1 (12 1221 ) ?201 2 microsemi corporation page 4 of 7 2n3498l thru 2n3501l electrical characteristics (t a = +25 c, u nless otherwise noted) switchin g characteristics characteristic symbol min. max. unit turn -on time v eb = 5 v; i c = 15 0 ma ; i b1 = 15 ma t on 115 ns turn - of f time i c = 15 0 ma ; i b1 = i b2 = - 15 ma t off 1150 ns saf e operatin g area (see soa figure a nd reference mil - std - 750 method 3053 ) dc tests t c = +25 o c, t r > 10 ns; 1 cycle , t = 1. 0 s test 1 v ce = 10 v, i c = 50 0 ma 2n3498 l, 2n3499 l v ce = 16.6 7 v, i c = 30 0 ma 2n3500 l, 2n3501 l test 2 v ce = 50 v, i c = 10 0 ma al l types test 3 v ce = 80 v, i c = 40 ma al l types clamped switching t a = +25 o c test 1 i b = 85 ma , i c = 50 0 ma 2n3498 l, 2n3499 l i b = 50 ma , i c = 30 0 ma 2n3500 l, 2n3501 l v ce collector to emitter voltage (volts) maximum s afe o perating a rea i c collector current (milliamperes) downloaded from: http:///
t4 - lds -0 276 -1, rev . 1 (12 1221 ) ?201 2 microsemi corporation page 5 of 7 2n3498l thru 2n3501l graphs t a (c) (ambient) figure 1 derating for all devices (r ja ) t c (c) (case) figure 2 derating for all devices (r jc ) dc operation maximum ra ting (w) dc operation maximum rating (w) downloaded from: http:///
t4 - lds -0 276 -1, rev . 1 (12 1221 ) ?201 2 microsemi corporation page 6 of 7 2n3498l thru 2n3501l graphs time (s) figure 3 thermal impedance graph (r ja ) time (s) figure 4 thermal impedance graph (r jc ) theta ( o c/w) theta ( o c/w) downloaded from: http:///
t4 - lds -0 276 -1, rev . 1 (12 1221 ) ?201 2 microsemi corporation page 7 of 7 2n3498l thru 2n3501l packag e dimensions notes: 1. dimension s are in inches. 2. millimeters are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. symbol cd shall not vary more than .010 (0.25 mm) in zone p. this zone is controlled for autom atic handling. 6. leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) - .000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) relative to tab. device may be measured by direct methods or by gauge. 7. symbol ld applies between l1 and l2. dimension ld applies between l2 and ll minimum. lead diameter s hall not exceed .042 inch (1.07 mm) within l1 and beyond ll minimum. 8. lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector. 9. lead number three is electrically connected to case. 10. beyond r maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 11. symbol r applied to both inside corners of tab. 12. for transistor types 2n3498, 2n3499, 2n3500, and 2n3501, ll = .50 inch (12.7 mm) minimum and .750 inch ( 19.1 mm) maximum. for transistor types 2n3498l, 2n3499l, 2n3500l, and 2n3501l, ll = 1.50 inches (38.1 mm) minimum and 1.750 inches (44.5 mm) maximum. 13. all three leads. 14. in accordance with asme y14.5m, diameters are equi valent to x symbology . dimensions symbol inch millimeters note min max min max cd 0.305 0.335 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7 ll see notes 7, 12 and 13 lu 0.016 0.019 0.4 1 0.48 7, 13 l1 0.050 1.27 13 l2 0.250 6.35 13 p 0.100 2.54 5 q 0.050 1.27 4 tl 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.71 0.86 10, 11 r 0.010 0.25 11 45 tp 45 tp 6 downloaded from: http:///
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